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A Novel SU8 Polymer Anchored Low Temperature HWCVD Nitride Polysilicon Piezoresitive Cantilever

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dc.contributor.author Rao, V. Ramgopal
dc.date.accessioned 2023-10-26T06:27:22Z
dc.date.available 2023-10-26T06:27:22Z
dc.date.issued 2014-12
dc.identifier.uri https://ieeexplore.ieee.org/document/6784305
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12630
dc.description.abstract In this paper, we present a novel approach for fabricating piezoresistive silicon nitride cantilevers using polymer as an anchor. In our approach, the silicon nitride structural layers, as well as the polycrystalline silicon piezoresistive layer, are deposited by a low temperature hot-wire chemical vapor deposition process. The novelty of this process is that the silicon wafer is not consumed and is reusable, and the process also allows use of alternate materials for cantilever fabrication in place of silicon substrate. The fabricated silicon nitride cantilevers are characterized for their mechanical and electromechanical behavior. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.subject EEE en_US
dc.subject MEMS en_US
dc.subject Microcantilevers en_US
dc.subject Silicon nitride en_US
dc.subject Piezoresistance en_US
dc.subject Polymer anchor en_US
dc.title A Novel SU8 Polymer Anchored Low Temperature HWCVD Nitride Polysilicon Piezoresitive Cantilever en_US
dc.type Article en_US


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