| dc.contributor.author |
Rao, V. Ramgopal |
|
| dc.date.accessioned |
2023-10-27T08:52:15Z |
|
| dc.date.available |
2023-10-27T08:52:15Z |
|
| dc.date.issued |
2011-03 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/document/5706349/keywords#keywords |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12669 |
|
| dc.description.abstract |
We report La 0.7 Sr 0.3 MnO 3 (LSMO)-Si heterojunctions fabricated using a new etch process that is compatible with standard CMOS technology. For a p-n-junction device fabrication, complete etch of a masked LSMO film was done using citric acid and was confirmed using superconducting quantum interferometry device magnetometry and energy-dispersive X-ray analysis. The etch conditions were found to have a negligible effect on the step height and electrical properties of other key silicon-technology materials such as photoresists, polysilicon, and silicon dioxide. This has been confirmed using profilometer measurements and C-V characteristics. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Citric acid etch |
en_US |
| dc.subject |
Magnetoelectronic devices |
en_US |
| dc.subject |
Manganite heterojunctions |
en_US |
| dc.subject |
Silicon technology |
en_US |
| dc.title |
Fabrication of La0.7Sr0.3MnO3–Si Heterojunctions Using a CMOS-Compatible Citric Acid Etch Process |
en_US |
| dc.type |
Article |
en_US |