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Toward System on Chip (SoC) Development Using FinFET Technology: Challenges, Solutions, Process Co-Development & Optimization Guidelines

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dc.contributor.author Rao, V. Ramgopal
dc.date.accessioned 2023-10-27T09:06:58Z
dc.date.available 2023-10-27T09:06:58Z
dc.date.issued 2011-06
dc.identifier.uri https://ieeexplore.ieee.org/abstract/document/5742994
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12671
dc.description.abstract In this paper, the impact of process/technology co-optimization on System-on-Chip (SoC) performance using detailed 3-D process/device simulations has been studied for nanoscale FinFET devices. We investigated challenges in FinFET device optimization and scaling while using standard ion implantation process for both overlap and underlap designs. Moreover, an implant-free (IF) complementary metal-oxide-semiconductor process is discussed for better scalability with improved performance. FinFETs designed using this IF process shows a ~2× improvement in static random-access memory and digital input/ output performance. Additionally, a modification to the IF process is proposed, which further helps in achieving an improved logic and analog performance for overall SoC development en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.subject EEE en_US
dc.subject Extremely thin SOI (ETSOI) en_US
dc.subject FinFET en_US
dc.subject Implant-free process en_US
dc.subject Ion implantation and system-on-chip (SoC) en_US
dc.title Toward System on Chip (SoC) Development Using FinFET Technology: Challenges, Solutions, Process Co-Development & Optimization Guidelines en_US
dc.type Article en_US


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