| dc.contributor.author |
Rao, V. Ramgopal |
|
| dc.date.accessioned |
2023-10-27T09:24:25Z |
|
| dc.date.available |
2023-10-27T09:24:25Z |
|
| dc.date.issued |
2010-12 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/document/5610723 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12674 |
|
| dc.description.abstract |
We investigated the surface band-to-band tunnelling (BTBT) current under the off-state condition in drain-extended MOS (DeMOS) devices. We found significant gate-induced drain leakage current due to surface BTBT, which was also reported earlier as the dominant cause of early time-dependent dielectric breakdown and device failure. Furthermore, a layout solution for the existing DeMOS device is proposed in order to mitigate the surface BTBT current and the associated gate oxide reliability issues, without sacrificing the mixed-signal performance of the device. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Band-to-band tunnelling (BTBT) |
en_US |
| dc.subject |
Drain extended |
en_US |
| dc.subject |
Drain-extended MOSFET (DeMOS) |
en_US |
| dc.subject |
Time-dependent dielectric breakdown (TDDB) |
en_US |
| dc.title |
A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device |
en_US |
| dc.type |
Article |
en_US |