dc.contributor.author |
Rao, V. Ramgopal |
|
dc.date.accessioned |
2023-10-28T04:40:15Z |
|
dc.date.available |
2023-10-28T04:40:15Z |
|
dc.date.issued |
2009-03 |
|
dc.identifier.uri |
https://pubs.aip.org/aip/apl/article/94/12/123304/151860/Determining-ionizing-radiation-using-sensors-based |
|
dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12698 |
|
dc.description.abstract |
The use of organic semiconducting material sensors as total dose radiation detectors is proposed, wherein the change in conductivity of an organic material is measured as a function of ionizing radiation dose. The simplest sensor is a resistor made using organic semiconductor. Furthermore, for achieving higher sensitivity, organic field effect transistor (OFET) is used as a sensor. A solution processed organic semiconductor resistor and an OFET were fabricated using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material. The devices are exposed to Cobalt-60 radiation for different total dose values. The changes in electrical characteristics indicate the potential of these devices as radiation sensors. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
AIP |
en_US |
dc.subject |
EEE |
en_US |
dc.subject |
Ionizing radiation |
en_US |
dc.subject |
Sensors |
en_US |
dc.subject |
Organic field-effect transistor (OFET) |
en_US |
dc.title |
Determining ionizing radiation using sensors based on organic semiconducting material |
en_US |
dc.type |
Article |
en_US |