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Determining ionizing radiation using sensors based on organic semiconducting material

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dc.contributor.author Rao, V. Ramgopal
dc.date.accessioned 2023-10-28T04:40:15Z
dc.date.available 2023-10-28T04:40:15Z
dc.date.issued 2009-03
dc.identifier.uri https://pubs.aip.org/aip/apl/article/94/12/123304/151860/Determining-ionizing-radiation-using-sensors-based
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12698
dc.description.abstract The use of organic semiconducting material sensors as total dose radiation detectors is proposed, wherein the change in conductivity of an organic material is measured as a function of ionizing radiation dose. The simplest sensor is a resistor made using organic semiconductor. Furthermore, for achieving higher sensitivity, organic field effect transistor (OFET) is used as a sensor. A solution processed organic semiconductor resistor and an OFET were fabricated using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material. The devices are exposed to Cobalt-60 radiation for different total dose values. The changes in electrical characteristics indicate the potential of these devices as radiation sensors. en_US
dc.language.iso en en_US
dc.publisher AIP en_US
dc.subject EEE en_US
dc.subject Ionizing radiation en_US
dc.subject Sensors en_US
dc.subject Organic field-effect transistor (OFET) en_US
dc.title Determining ionizing radiation using sensors based on organic semiconducting material en_US
dc.type Article en_US


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