| dc.contributor.author |
Rao, V. Ramgopal |
|
| dc.date.accessioned |
2023-10-28T04:42:40Z |
|
| dc.date.available |
2023-10-28T04:42:40Z |
|
| dc.date.issued |
2009-05 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/abstract/document/4804776 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12699 |
|
| dc.description.abstract |
In this paper, a comprehensive study of hot- carrier injection (HCI) has been performed on high-performance Si-passivated pMOSFETs with high-k metal gate fabricated on n-type germanium-on-silicon (Ge-on-Si) substrates. Negative bias temperature instability (NBTI) has also been explored on the same devices. The following are found: (1) Impact ionization rate in Ge-on-Si MOSFETs is approximately two orders higher as compared to their Si counterpart; (2) NBTI degradation is a lesser concern than HCI for Ge-on-Si pMOSFETs; and (3) increasing the Si-passivation thickness from four to eight monolayers provides a remarkable lifetime improvement. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Germanium (Ge) |
en_US |
| dc.subject |
Hot carrier (HC) |
en_US |
| dc.subject |
Impact ionization |
en_US |
| dc.subject |
Negative bias temperature instability (NBTI) |
en_US |
| dc.subject |
pMOSFET |
en_US |
| dc.title |
Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs |
en_US |
| dc.type |
Article |
en_US |