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Explosive vapor sensor using poly (3-hexylthiophene) and CuII tetraphenylporphyrin composite based organic field effect transistors

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dc.contributor.author Rao, V. Ramgopal
dc.date.accessioned 2023-10-28T06:42:19Z
dc.date.available 2023-10-28T06:42:19Z
dc.date.issued 2008-12
dc.identifier.uri https://pubs.aip.org/aip/apl/article/93/26/263306/118466/Explosive-vapor-sensor-using-poly-3-hexylthiophene
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12701
dc.description.abstract Organic field effect transistors based on poly(3-hexylthiophene) and CuII tetraphenylporphyrin composite were investigated as sensors for detection of vapors of nitrobased explosive compounds, viz., 1,3,5-trinitro-1,3,5-triazacyclohexane (RDX), 2,4,6-trinitrotoluene (TNT), and dinitrobenzene, which are also strong oxidizing agents. Significant changes, suitable for sensor response, were observed in transistor “on” current (Ion) and conductance (S) after exposure. A similar device response was, however, not observed for oxidizing agents such as benzoquinone and benzophenone. The Fourier transform infrared spectrometry experiments supported the results, where exposure to RDX and TNT vapors resulted in a significant shift in IR peaks. en_US
dc.language.iso en en_US
dc.publisher AIP en_US
dc.subject EEE en_US
dc.subject Vapor Sensor en_US
dc.subject Organic field effect transistors (OFETs) en_US
dc.title Explosive vapor sensor using poly (3-hexylthiophene) and CuII tetraphenylporphyrin composite based organic field effect transistors en_US
dc.type Article en_US


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