| dc.contributor.author |
Rao, V. Ramgopal |
|
| dc.date.accessioned |
2023-10-28T07:22:31Z |
|
| dc.date.available |
2023-10-28T07:22:31Z |
|
| dc.date.issued |
2008-08 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/document/4578848 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12706 |
|
| dc.description.abstract |
A drain current model is developed for a symmetrically driven undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET) under the drift-diffusion transport mechanism, with velocity saturation effects being included as an integral part of the model derivation. Velocity saturation effects are modeled by using the Caughey-Thomas engineering model with exponent n = 2. I d -V d , I d -V g , g m -V g , and g DS -V d comparisons are made with 2-D device simulation results, and a very good match is found all the way from subthreshold to strong inversion. Gummel symmetry compliance is also shown. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Current |
en_US |
| dc.subject |
Double-gate MOSFET (DGFET) |
en_US |
| dc.subject |
Mobility |
en_US |
| dc.subject |
Modeling |
en_US |
| dc.subject |
MOSFETs |
en_US |
| dc.subject |
Velocity saturation |
en_US |
| dc.title |
Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs |
en_US |
| dc.type |
Article |
en_US |