DSpace Repository

NBTI degradation and its impact for analog circuit reliability

Show simple item record

dc.contributor.author Rao, V. Ramgopal
dc.date.accessioned 2023-10-30T09:23:31Z
dc.date.available 2023-10-30T09:23:31Z
dc.date.issued 2005-12
dc.identifier.uri https://ieeexplore.ieee.org/document/1546322
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12726
dc.description.abstract A methodology to quantify the degradation at circuit level due to negative bias temperature instability (NBTI) has been proposed in this work. Using this approach, a variety of analog/mixed-signal circuits are simulated, and their degradation is analyzed. It has been shown that the degradation in circuit performance is mainly dependent on the circuit configuration and its application rather than the absolute value of degradation at the device level. In circuits such as digital-to-analog converters, NBTI can pose a serious reliability concern, as even a small variation in bias currents can cause significant gain errors. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.subject EEE en_US
dc.subject Analog/mixed-signal circuits en_US
dc.subject Circuit lifetime en_US
dc.subject Negative bias temperature instability (NBTI) en_US
dc.subject pMOSFET degradation en_US
dc.subject Threshold-voltage shift en_US
dc.title NBTI degradation and its impact for analog circuit reliability en_US
dc.type Article en_US


Files in this item

Files Size Format View

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record

Search DSpace


Advanced Search

Browse

My Account