| dc.contributor.author | Rao, V. Ramgopal | |
| dc.date.accessioned | 2023-10-31T06:41:39Z | |
| dc.date.available | 2023-10-31T06:41:39Z | |
| dc.date.issued | 2001-07 | |
| dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S0026271401000671 | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12754 | |
| dc.description.abstract | A multi-frequency transconductance technique for interface characterization of sub-micron SOI–MOSFETs is implemented. This technique is shown to be highly suitable for interface characterization in SOI devices where conventional charge-pumping techniques cannot be applied. Using this multi-frequency technique, sub-micron SOI–MNSFETs with a SiN dielectric deposited by a novel jet-vapor-deposition (JVD) process are characterized. Results are compared with charge pumping results obtained on bulk MNSFETs with identically processed JVD nitrides. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.subject | EEE | en_US |
| dc.subject | SOI–MOSFETs | en_US |
| dc.subject | JVD nitrides | en_US |
| dc.title | Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI–MOSFETs | en_US |
| dc.type | Article | en_US |
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