Abstract:
The electron velocity overshoot phenomenon in the
inversion layer is experimentally investigated using a novel thinfilm
silicon-on-insulator (SOI) test structure with channel lengths
down to 0.08 m. The uniformity of the carrier density and
tangential field is realized by employing a lateral asymmetric
channel (LAC) profile. The electron drift velocity observed in
this work is 9.5 106 cm/s for a device with Le = 0:08 m
at 300 K. The upward trend in electron velocity can be clearly
noticed for decreasing channel lengths