| dc.contributor.author | Rao, V. Ramgopal | |
| dc.date.accessioned | 2023-10-31T09:12:29Z | |
| dc.date.available | 2023-10-31T09:12:29Z | |
| dc.date.issued | 1999-05 | |
| dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S0038110198003268 | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12763 | |
| dc.description.abstract | A new charge pumping (CP) technique is proposed to obtain the spatial profile of interface-state density (Nit) and oxide charges (Not) near the drain junction of hot-carrier stressed MOSFETs. Complete separation of Nit from Not is achieved by using a direct noniterative method. The pre-stress CP edge is corrected for the charges associated with both the generated Nit and Not. A closed form model is developed to predict the stress-induced incremental CP current. The damage distributions are obtained after fitting the model with experimental data. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.subject | EEE | en_US |
| dc.subject | MOSFETs | en_US |
| dc.subject | Charge pumping (CP) | en_US |
| dc.subject | Pumping technique | en_US |
| dc.title | A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs | en_US |
| dc.type | Article | en_US |
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