A study of 100 nm channel length asymmetric channel MOSFET by using charge pumping

dc.contributor.author	Rao, V. Ramgopal
dc.date.accessioned	2023-10-31T09:16:44Z
dc.date.available	2023-10-31T09:16:44Z
dc.date.issued	1999-09
dc.identifier.uri	https://www.sciencedirect.com/science/article/abs/pii/S016793179900369X
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12765
dc.description.abstract	Lateral Asymmetric Channel (LAC) MOSFETs with channel lengths down to 0.1 μm have been fabricated and characterized for their electrical performance. Using charge pumping, we show, for the first time, channel VT profiles obtained experimentally, demonstrating realization of asymmetric channel MOSFETs down to 0.1 μm channel lengths. Our detailed experimental characterizations show improved performance for LAC MOSFETs over conventional MOSFETs, in addition to excellent hot-carrier reliability. Based on 2-D device simulation results, we attribute the improved hot-carrier reliability in LAC MOSFETs to the reduced peak lateral electric field in the channel.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.subject	EEE	en_US
dc.subject	Charge pumping	en_US
dc.subject	MOSFETs	en_US
dc.title	A study of 100 nm channel length asymmetric channel MOSFET by using charge pumping	en_US
dc.type	Article	en_US

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