| dc.contributor.author | Rao, V. Ramgopal | |
| dc.date.accessioned | 2023-10-31T09:20:12Z | |
| dc.date.available | 2023-10-31T09:20:12Z | |
| dc.date.issued | 1998-05 | |
| dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S004060909800474X | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12766 | |
| dc.description.abstract | We introduce the concept of electric-field-tailoring in MBE-grown vertical metal-oxide semiconductor field-effect transistors (MOSFETs) and show that significant improvements in terms of supply voltage, current and speed are achievable in such MOSFETs by employing a planar-doped-barrier MOSFET (PDBFET) concept. Investigation of electrical characteristics and carrier transport in sub-100 nm channel PDBFETs shows the predicted improvements compared with classical MOSFETs. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.subject | EEE | en_US |
| dc.subject | MOSFETs | en_US |
| dc.subject | Electric fields | en_US |
| dc.title | Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs | en_US |
| dc.type | Article | en_US |
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