| dc.contributor.author | Rao, V. Ramgopal | |
| dc.date.accessioned | 2023-10-31T10:54:14Z | |
| dc.date.available | 2023-10-31T10:54:14Z | |
| dc.date.issued | 1997-03 | |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/556088 | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12771 | |
| dc.description.abstract | We have investigated gate oxide degradation as a function of high-field constant current stress for two types of oxides, viz. standard dry and LPCVD oxides. Charge injection was done from both electrodes, the gate and the substrate. Our results indicate that compared to dry oxides, LPCVD oxides show reduced charge trapping and interface state generation for inversion stress. The degradation in LPCVD oxides with constant current stress has been explained by the hydrogen model. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | EEE | en_US |
| dc.subject | Temperature | en_US |
| dc.subject | Degradation | en_US |
| dc.subject | Dielectric substrates | en_US |
| dc.subject | Annealing | en_US |
| dc.subject | Thermal stresses | en_US |
| dc.subject | Electrodes | en_US |
| dc.subject | Oxidation | en_US |
| dc.subject | Capacitors | en_US |
| dc.title | High-field stressing of LPCVD gate oxides | en_US |
| dc.type | Article | en_US |
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