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Organic field effect transistors for explosive and radiation dosimetry applications

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dc.contributor.author Rao, V. Ramgopal
dc.date.accessioned 2023-11-01T09:32:41Z
dc.date.available 2023-11-01T09:32:41Z
dc.date.issued 2016-11
dc.identifier.uri https://ieeexplore.ieee.org/document/7808602
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12785
dc.description.abstract This paper presents a brief overview of an Organic field effect transistor (OFET) based sensor applications. It highlights recent progress in the field of gas sensing and ionizing radiation sensing using OFETs. Besides step-by-step improvement of conventional devices, novel materials and novel approaches for OFET based gas and radiation sensing are discussed. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.subject EEE en_US
dc.subject Organic field effect transistors (OFETs) en_US
dc.subject Gas sensing en_US
dc.subject Radiation sensing en_US
dc.title Organic field effect transistors for explosive and radiation dosimetry applications en_US
dc.type Article en_US


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