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Piezoresponse force microscopy (PFM) characterization of GaN nanowires grown by Plasma assisted Molecular beam epitaxy (PA-MBE)

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dc.contributor.author Rao, V. Ramgopal
dc.date.accessioned 2023-11-01T10:03:41Z
dc.date.available 2023-11-01T10:03:41Z
dc.date.issued 2016
dc.identifier.uri https://ieeexplore.ieee.org/document/7578091
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12787
dc.description.abstract In this work, we have grown GaN nanowires using Plasma assisted Molecular beam epitaxy (PA-MBE) on Si (111) substrate. High resolution X-ray diffraction (HRXRD) characterization and scanning electron microscopy (SEM) studies were carried out to investigate the crystal structure, morphology and uniformity of the grown nanowires. These studies confirm wurtzite crystal structure and uniform growth. The diameter of nanowires was observed to be in the range of 100 – 200 nm with length between 1 – 2 µm. Piezoresponse force microscopy (PFM) was used in Dual AC Resonance Tracking (DART) mode for imaging the height and phase response from the grown nanowires. A switching spectroscopy PFM (SS-PFM) was employed to measure the piezoresponse from individual nanowires. It shows repetitive Displacement-voltage (D-V) loops at multiple points which demonstrates the defect free and high quality growth. An effective piezoelectric coefficient, d 33 in the range of 14 – 20 pm/V was calculated for GaN nanowires. Further, we have also simulated piezoresponse of GaN thin films and nanowires for comparison and confirmed that size dependence (polarization/volume) is a dominant factor for increase in the piezoresponse. This study demonstrates the usability of GaN nanowires for sensing, actuation and energy harvesting for high temperature applications. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.subject EEE en_US
dc.subject Gallium Nitride (GaN) en_US
dc.subject Nanowires (NW) en_US
dc.subject Piezoresponse Force Microscopy (PFM) en_US
dc.subject Dual AC Resonance Tracking (DART) en_US
dc.subject Switching Spectroscopy PFM (SSPFM) en_US
dc.title Piezoresponse force microscopy (PFM) characterization of GaN nanowires grown by Plasma assisted Molecular beam epitaxy (PA-MBE) en_US
dc.type Article en_US


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