| dc.contributor.author |
Rao, V. Ramgopal |
|
| dc.date.accessioned |
2023-11-01T10:06:14Z |
|
| dc.date.available |
2023-11-01T10:06:14Z |
|
| dc.date.issued |
2016 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/document/7751514 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12788 |
|
| dc.description.abstract |
The transport properties of back-gated graphene field effect transistors (GFETs) can be tuned via chemical doping. In this study, we report alteration of charge transport properties of GFET via 5-(4-hydroxyphenyl)-10,15,20-tri-(p-tolyl) zinc(II) porphyrin (Zn(II)-TTPOH) and its free base counterpart. We propose that, the porphyrin induces p-type doping in graphene. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Graphene |
en_US |
| dc.subject |
Logic gates |
en_US |
| dc.subject |
Sensors |
en_US |
| dc.subject |
Two dimensional displays |
en_US |
| dc.subject |
Chemicals |
en_US |
| dc.subject |
Optical device fabrication |
en_US |
| dc.title |
Porphyrin induced changes in charge transport of graphene FET |
en_US |
| dc.type |
Article |
en_US |