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Self assembled monolayer applications for nano-scale CMOS

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dc.contributor.author Rao, V. Ramgopal
dc.date.accessioned 2023-11-01T10:29:44Z
dc.date.available 2023-11-01T10:29:44Z
dc.date.issued 2016
dc.identifier.uri https://ieeexplore.ieee.org/document/7589436
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12791
dc.description.abstract As the CMOS technology enters into the sub 10 nm node, in order to reap the benefits of scaling, different techniques, materials and processes are required Various issues of reliability, variability and power issues are a challenge with the miniaturization of devices. Integration of bottom up processes becomes essential for meeting the scaling targets with respect to the material thickness and variability requirements. In the present work, we demonstrate the use of self-assembled monolayers for addressing the reliability and functionality issues in nano-scale CMOS. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.subject EEE en_US
dc.subject Self-assembled monolayer (SAM) en_US
dc.subject Nano-scale en_US
dc.subject CMOS en_US
dc.subject Copper diffusion en_US
dc.subject Work function en_US
dc.title Self assembled monolayer applications for nano-scale CMOS en_US
dc.type Article en_US


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