| dc.contributor.author |
Rao, V. Ramgopal |
|
| dc.date.accessioned |
2023-11-02T05:25:15Z |
|
| dc.date.available |
2023-11-02T05:25:15Z |
|
| dc.date.issued |
2016-03 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/document/7434944 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12798 |
|
| dc.description.abstract |
In this paper, we present a fully integrated radio-frequency (RF) power amplifier (PA) using high voltage STI type DeNMOS device in standard 28nm CMOS technology. The device is fully compatible with scaled CMOS process technologies with minor cost penalties. The device prototype was fabricated in 28nm CMOS process and packaged in commercially available ball-grid-array (BGA) package to mimic real application conditions. Complete power amplifier circuit, made on low-loss laminate using this BGA package, is also presented. Packaged RF PA achieves 19dBm of output power at frequency of 1GHz with high linearity. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Drain Extended MOS |
en_US |
| dc.subject |
Shallow-trench-isolation (STI) |
en_US |
| dc.subject |
System-on-chip (SoC) |
en_US |
| dc.subject |
RF Power Amplifier |
en_US |
| dc.title |
A Fully-Integrated Radio-Frequency Power Amplifier in 28nm CMOS Technology Mounted in BGA Package |
en_US |
| dc.type |
Article |
en_US |