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Bottom-up meets top down: An integrated approach for nano-scale devices

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dc.contributor.author Rao, V. Ramgopal
dc.date.accessioned 2023-11-02T05:39:04Z
dc.date.available 2023-11-02T05:39:04Z
dc.date.issued 2015
dc.identifier.uri https://ieeexplore.ieee.org/document/7285158
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12799
dc.description.abstract Conventional CMOS and MEMS technologies usually employ top-down fabrication methodologies for high volume manufacturing. However, as the CMOS technologies are scaled down, there are many challenges owing to its variability, reliability and power issues. Some of these issues in CMOS and MEMS technologies can be better addressed by employing a host of bottom-up nanotechnology approaches through innovative process integration strategies. This calls for an intelligent integration of diverse technologies, materials and processes on the same die or in a package for realization of future smart systems. Here we present some of these integration methodologies where completely diverse platforms, materials and approaches are brought together in order to realize a targeted system functionality. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.subject EEE en_US
dc.subject Top-down en_US
dc.subject Bottom-up en_US
dc.subject Self-assembly en_US
dc.subject Zinc Porphyrin en_US
dc.subject MEMS/NEMS en_US
dc.title Bottom-up meets top down: An integrated approach for nano-scale devices en_US
dc.type Article en_US


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