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Source/drain engineering in OFETs using self assembled monolayers of metal complexed porphyrins

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dc.contributor.author Rao, V. Ramgopal
dc.date.accessioned 2023-11-02T06:00:33Z
dc.date.available 2023-11-02T06:00:33Z
dc.date.issued 2015
dc.identifier.uri https://ieeexplore.ieee.org/document/7388659
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12801
dc.description.abstract Pentacene-based Organic Field Effect Transistors (OFETs) are promising platforms for sensing and computing applications. However, due to the chemical reactivity of the organic semiconductor, electrodes cannot be lithographically patterned after the semiconductor is deposited. Deposition of electrodes before the semiconductor material, on the other hand leads to an interface degradation that impacts performance of the organic transistor. In this work, we show for the first time application of porphyrin self-assembled monolayers (SAMs) for work function tuning of metal source/drain electrodes for organic transistor applications. We report the effect of various metal complexed porphyrin SAMs on the surface energy of the electrode and morphology of organic semiconductor and investigate the physical properties as well as electrical characteristics of OFETs with these SAMs. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.subject EEE en_US
dc.subject Contact en_US
dc.subject Work Function Engineering en_US
dc.subject Porphyrin en_US
dc.subject Pentacene en_US
dc.subject Organic field-effect transistor (OFET) en_US
dc.title Source/drain engineering in OFETs using self assembled monolayers of metal complexed porphyrins en_US
dc.type Article en_US


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