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On the thermal failure in nanoscale devices: Insight towards heat transport including critical BEOL and design guidelines for robust thermal management & EOS/ESD reliability

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dc.contributor.author Rao, V. Ramgopal
dc.date.accessioned 2023-11-02T10:38:39Z
dc.date.available 2023-11-02T10:38:39Z
dc.date.issued 2011
dc.identifier.uri https://ieeexplore.ieee.org/document/5784498
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12820
dc.description.abstract For the first time we have reported thermal failure of FinFET devices related to fin thickness mismatch, under the normal operating condition. Pre and post failure characteristics are investigated. Furthermore, a detailed physical insight towards heat transport in a complex back-end of line (BEOL) of a logic circuit network is given for FinFET and extreme thin silicon on insulator (ETSOI) devices. Self heating behavior of both the FinFET and ETSOI devices is compared. Moreover, layout, device and technology design guidelines (based on complex 3D TCAD) are given for robust thermal management and electrical overstress / electrostatic discharge (EOS/ESD) reliability. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.subject EEE en_US
dc.subject BEOL reliability en_US
dc.subject FinFET en_US
dc.subject Extremely thin SOI (ETSOI) en_US
dc.subject Electrothermal en_US
dc.subject Electrostatic discharge (ESD) en_US
dc.title On the thermal failure in nanoscale devices: Insight towards heat transport including critical BEOL and design guidelines for robust thermal management & EOS/ESD reliability en_US
dc.type Article en_US


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