| dc.contributor.author |
Rao, V. Ramgopal |
|
| dc.date.accessioned |
2023-11-02T10:52:01Z |
|
| dc.date.available |
2023-11-02T10:52:01Z |
|
| dc.date.issued |
2010-11 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/abstract/document/5682919 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12823 |
|
| dc.description.abstract |
This paper demonstrates a 3D TCAD based approach towards the evaluation and pre-silicon development of nanoscale devices for advanced ESD protection concepts. Impact of various physical models and parameters on the accuracy of predicted ESD figures of merit are discussed. Moreover, various devices options, have been evaluated from 3D TCAD simulations. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Electrostatic discharge (ESD) |
en_US |
| dc.subject |
Space charge modulation |
en_US |
| dc.subject |
Thermal failure |
en_US |
| dc.subject |
Moving filaments |
en_US |
| dc.title |
3D TCAD based approach for the evaluation of nanoscale devices during ESD failure |
en_US |
| dc.type |
Article |
en_US |