| dc.contributor.author | Rao, V. Ramgopal | |
| dc.date.accessioned | 2023-11-02T10:56:54Z | |
| dc.date.available | 2023-11-02T10:56:54Z | |
| dc.date.issued | 2010 | |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/5682922 | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12824 | |
| dc.description.abstract | This paper presents ESD evaluation of various nanoscale drain extended MOS devices. Current and time evolution of current filaments formed under the ESD stress conditions are investigated. A complete picture of device's behavior at the onset of space charge modulation and the evolution of current filamentation is discussed based on Transient Interferometric mapping studies. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | EEE | en_US |
| dc.subject | Drain Extended MOS | en_US |
| dc.subject | Electrostatic discharge (ESD) | en_US |
| dc.subject | TIM | en_US |
| dc.subject | Base push-out | en_US |
| dc.subject | Current filamentation | en_US |
| dc.title | On the Transient behavior of various drain extended MOS devices under the ESD stress condition | en_US |
| dc.type | Article | en_US |
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