| dc.contributor.author |
Rao, V. Ramgopal |
|
| dc.date.accessioned |
2023-11-02T11:19:51Z |
|
| dc.date.available |
2023-11-02T11:19:51Z |
|
| dc.date.issued |
2010-05 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/document/5488723 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12829 |
|
| dc.description.abstract |
We present 3D device modeling of RESURF or non-STI type DeNMOS device under ESD conditions. The impact of base push-out, pulse-to-pulse instability and electrical imbalance on the various phases of filamentation is discussed. A new phenomenon called “week NPN action” and the cause of early and fast failure is identified. A modification of the device is proposed which achieved an improvement of ~5X in failure threshold (I T2 ) and ~2X in ESD window without degrading its I/O performance. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Drain-extended MOSFET (DeMOS) |
en_US |
| dc.subject |
ESD Failure |
en_US |
| dc.subject |
Space charge buildup |
en_US |
| dc.subject |
Pulse-to-pulse instability |
en_US |
| dc.title |
On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions |
en_US |
| dc.type |
Article |
en_US |