| dc.contributor.author | Rao, V. Ramgopal | |
| dc.date.accessioned | 2023-11-03T04:11:59Z | |
| dc.date.available | 2023-11-03T04:11:59Z | |
| dc.date.issued | 2009-12 | |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/5424337 | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12833 | |
| dc.description.abstract | We present filament behavior of STI type DeNMOS devices using detailed Transient Interferometric Mapping experiments and 3D TCAD simulations. Device behavior at different TLP currents is discussed. The impact of localized base-push-out, power dissipation because of space charge build-up, regenerative NPN action and various events during the current filamentation are explored. By uniform turn-on of the device during base push-out the failure current could be improved by more than 2X. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | EEE | en_US |
| dc.subject | MOS devices | en_US |
| dc.subject | Fingers | en_US |
| dc.subject | Current density | en_US |
| dc.subject | Electric breakdown | en_US |
| dc.subject | CMOS technology | en_US |
| dc.subject | Nanoelectronics | en_US |
| dc.subject | Current distribution | en_US |
| dc.subject | Impact ionization | en_US |
| dc.title | Filament study of STI type drain extended NMOS device using transient interferometric mapping | en_US |
| dc.type | Article | en_US |
| Files | Size | Format | View |
|---|---|---|---|
|
There are no files associated with this item. |
|||