| dc.contributor.author | Rao, V. Ramgopal | |
| dc.date.accessioned | 2023-11-03T07:11:50Z | |
| dc.date.available | 2023-11-03T07:11:50Z | |
| dc.date.issued | 2009 | |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/5173344 | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12839 | |
| dc.description.abstract | A novel DeMOS device with modified body and source region in grounded gate (gg) NMOS configuration for ESD protection is proposed. Detailed 3D simulations indicate a high failure threshold because of moving current filaments and self-protection from gate oxide breakdown, even for fast transients. A detailed physics of second basepushout and moving filaments is discussed. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | Robustness | en_US |
| dc.subject | Electrostatic discharges | en_US |
| dc.subject | Electric breakdown | en_US |
| dc.subject | Switches | en_US |
| dc.subject | Stress | en_US |
| dc.subject | Breakdown voltage | en_US |
| dc.title | Highly resistive body STI NDeMOS: An optimized DeMOS device to achieve moving current filaments for robust ESD protection | en_US |
| dc.type | Article | en_US |
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