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Photoplastic NEMS with an Encapsulated Polysilicon Piezoresistor

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dc.contributor.author Rao, V. Ramgopal
dc.date.accessioned 2023-11-03T09:36:02Z
dc.date.available 2023-11-03T09:36:02Z
dc.date.issued 2008
dc.identifier.uri https://ieeexplore.ieee.org/document/4617122
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12848
dc.description.abstract We demonstrate a photoplastic NEMS device that has an encapsulated polysilicon piezoresistor. The crucial temperature limitation of depositing a polysilicon film on a polymer was overcome by employing a novel Hotwire CVD process. In this paper, we report the fabrication and characterization of a novel polymeric cantilever with an embedded piezoresistor, which exploits the low Youngs modulus of a polymer and high gauge factor of polysilicon. Such devices are widely used for sensing biochemicals. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.subject EEE en_US
dc.subject Electrical resistance measurement en_US
dc.subject Substrates en_US
dc.subject Polymers en_US
dc.subject Voltage measurement en_US
dc.subject Distance measurement en_US
dc.title Photoplastic NEMS with an Encapsulated Polysilicon Piezoresistor en_US
dc.type Article en_US


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