| dc.contributor.author |
Rao, V. Ramgopal |
|
| dc.date.accessioned |
2023-11-03T11:01:19Z |
|
| dc.date.available |
2023-11-03T11:01:19Z |
|
| dc.date.issued |
2007 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/document/4378080 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12853 |
|
| dc.description.abstract |
It is shown that body doping can be used to match the Bulk FinFETs' DC performance with that of SOI FinFETs, even down to 22 nm technology node, by using calibrated full 3D device simulations. However higher body doping does not necessarily mean better performance always as there is a optimum body doping. The optimum doping should be carefully chosen such that device exhibits no punch through and no BTBT leakage currents. Thus careful body doping optimization is critical for the reliable device operation of novel Bulk FinFET structures. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
FinFETs |
en_US |
| dc.subject |
Doping profiles |
en_US |
| dc.subject |
Thermal conductivity |
en_US |
| dc.subject |
Semiconductor process modeling |
en_US |
| dc.subject |
Guidelines |
en_US |
| dc.subject |
Quantization |
en_US |
| dc.title |
Improving the DC performance of Bulk FinFETs by Optimum Body Doping |
en_US |
| dc.type |
Article |
en_US |