| dc.contributor.author |
Rao, V. Ramgopal |
|
| dc.date.accessioned |
2023-11-04T04:13:15Z |
|
| dc.date.available |
2023-11-04T04:13:15Z |
|
| dc.date.issued |
2006 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/iel5/4017118/4017119/04017204.pdf |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12858 |
|
| dc.description.abstract |
In this paper, we investigate the influence of forward and reverse
body bias stress on the hot carrier induced degradation of MOS
analog performance parameters. The underlying physical
mechanisms are identified with the help of experimental results,
TCAD and Monte-Carlo simulations. We show that under forward
body bias stress conditions, the auger recombination enhanced hot
carrier injection (HCI) degrades the device and circuit performance
considerably. Degradation in various analog circuits’ performance is
quantified by considering the individual transistors under different
stress conditions. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Analog Performance Degradation |
en_US |
| dc.subject |
Substrate Enhanced HCI |
en_US |
| dc.subject |
Forward Body Biasing (FBB) Scheme |
en_US |
| dc.subject |
Auger recombination |
en_US |
| dc.title |
Analog Device and Circuit Performance Degradation under Substrate Enhanced Hot Carrier Stress Conditions |
en_US |
| dc.type |
Article |
en_US |