| dc.contributor.author | Rao, V. Ramgopal | |
| dc.date.accessioned | 2023-11-06T06:50:12Z | |
| dc.date.available | 2023-11-06T06:50:12Z | |
| dc.date.issued | 2004-07 | |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/1345613 | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12867 | |
| dc.description.abstract | This paper discusses the effect of localized charge storage on sub-threshold swing and threshold voltage in silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cells. By analyzing the change in potential contours, it has been shown that the change in sub-threshold swing is correlated to fringing of electric field lines, and hence to the gate-to-substrate capacitance. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | EEE | en_US |
| dc.subject | Degradation | en_US |
| dc.subject | SONOS devices | en_US |
| dc.subject | Threshold voltage | en_US |
| dc.subject | Random access memory | en_US |
| dc.subject | Capacitance | en_US |
| dc.subject | Nonvolatile memory | en_US |
| dc.subject | Leakage current | en_US |
| dc.subject | Power dissipation | en_US |
| dc.title | Sub-threshold Swing Degradation due to Localized Charge Storage in SONOS Memories | en_US |
| dc.type | Article | en_US |
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