| dc.contributor.author | Rao, V. Ramgopal | |
| dc.date.accessioned | 2023-11-06T06:52:40Z | |
| dc.date.available | 2023-11-06T06:52:40Z | |
| dc.date.issued | 2004-07 | |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/1345639 | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12868 | |
| dc.description.abstract | The role of initial interface damage for negative bias temperature instability (NBTI) degradation has been examined for short channel MOSFET devices. In this paper we present a detailed study of the role of initial silicon-oxide interface quality on the NBTI degradation. Hole density and oxide fields are important parameters responsible for NBTI degradation. Our results show that NBTI degradation is independent of initial interface quality. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | EEE | en_US |
| dc.subject | Niobium compounds | en_US |
| dc.subject | Titanium compounds | en_US |
| dc.subject | Degradation | en_US |
| dc.subject | MOSFET circuits | en_US |
| dc.subject | Interface states | en_US |
| dc.subject | Stress | en_US |
| dc.title | Understanding the NBTI Degradation in Halo- Doped Channel p-MOSFETs | en_US |
| dc.type | Article | en_US |
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