Abstract:
Single halo (SH) MOSFETs are recently proposed for mixed signal applications in view of their superior analog performance such as gain, transconductance, output resistance etc [1]. In this work, we investigate the hot carrier degradation behaviour of SH and conventional p-MOSFETs using specific stress conditions appropriate for analog applications. The degradation of analog device parameters due to Cannel Hot carrier (CHC) stress and its implications on circuit operation are discussed.