| dc.contributor.author |
Rao, V. Ramgopal |
|
| dc.date.accessioned |
2023-11-07T04:17:32Z |
|
| dc.date.available |
2023-11-07T04:17:32Z |
|
| dc.date.issued |
2002-09 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/abstract/document/1503933 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12885 |
|
| dc.description.abstract |
Single halo (SH) MOSFETs are recently proposed for mixed signal applications in view of their superior analog performance such as gain, transconductance, output resistance etc [1]. In this work, we investigate the hot carrier degradation behaviour of SH and conventional p-MOSFETs using specific stress conditions appropriate for analog applications. The degradation of analog device parameters due to Cannel Hot carrier (CHC) stress and its implications on circuit operation are discussed. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
MOSFET circuits |
en_US |
| dc.subject |
Implants |
en_US |
| dc.subject |
Degradation |
en_US |
| dc.subject |
Current measurement |
en_US |
| dc.subject |
Analog circuits |
en_US |
| dc.subject |
Stress measurement |
en_US |
| dc.subject |
Voltage |
en_US |
| dc.title |
Optimization of Single Halo p-MOSFET Implant Parameters for Improved Analog Performance and Reliability |
en_US |
| dc.type |
Animation |
en_US |