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Simulation Study of Non-Quasi Static Behaviour of MOS Transistors

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dc.contributor.author Rao, V. Ramgopal
dc.date.accessioned 2023-11-07T04:35:05Z
dc.date.available 2023-11-07T04:35:05Z
dc.date.issued 2002-04
dc.identifier.uri https://briefs.techconnect.org/papers/simulation-study-of-non-quasi-static-behaviour-of-mos-transistors/
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12887
dc.description.abstract In this paper, we study the “non-quasi static” (NQS) behaviour of MOS transistors using an exact quasi static Look-up Table (LUT) [1] MOSFET model implemented in a general-purpose circuit simulator SEQUEL [2], device simulator ISE-TCAD [3] and SPICE BSIM3v3 [4] QS and NQS models. An NMOS transistor of channel length 2 um is simulated using LUT, ISE and SPICE3 and terminal currents are qualitatively studied. The method for extraction of terminal charges, which are required for circuit simulation using the LUT approach also presented. en_US
dc.language.iso en en_US
dc.publisher TechConnect en_US
dc.subject EEE en_US
dc.subject Circuit simulation en_US
dc.subject Look-up table (LUT) en_US
dc.subject MOSFETs en_US
dc.subject Non-quasi-static model en_US
dc.subject Terminal charges en_US
dc.title Simulation Study of Non-Quasi Static Behaviour of MOS Transistors en_US
dc.type Article en_US


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