Abstract:
This paper analyzes the Channel Initiated
Secondary Electron injection mechanism
and the resulting hot-carrier degradation
in deep sub-micron n-channel MOSFETs.
The correlation between gate (IG) and
substrate current (IB) has been studied for
different values of substrate bias. Stress
and charge pumping measurements have
been carried out to study the degradation
under identical substrate bias and gate
current conditions. Results show that under
identical gate current (programming time
for flash memory cells), the degradation is
less for higher negative substrate bias.