| dc.contributor.author |
Rao, V. Ramgopal |
|
| dc.date.accessioned |
2023-11-07T09:19:51Z |
|
| dc.date.available |
2023-11-07T09:19:51Z |
|
| dc.date.issued |
2001-07 |
|
| dc.identifier.uri |
https://www.sciencedirect.com/science/article/abs/pii/S0026271401000671 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12895 |
|
| dc.description.abstract |
A multi-frequency transconductance technique for interface characterization of sub-micron SOI–MOSFETs is implemented. This technique is shown to be highly suitable for interface characterization in SOI devices where conventional charge-pumping techniques cannot be applied. Using this multi-frequency technique, sub-micron SOI–MNSFETs with a SiN dielectric deposited by a novel jet-vapor-deposition (JVD) process are characterized. Results are compared with charge pumping results obtained on bulk MNSFETs with identically processed JVD nitrides. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
Elsevier |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
SOI–MOSFETs |
en_US |
| dc.subject |
Jet-vapor-deposition (JVD) |
en_US |
| dc.title |
Multi-Frequency Transconductance Technique for Interface Characterization of Deep Sub-Micron SOI-MOSFETs |
en_US |
| dc.type |
Article |
en_US |