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Multi-Frequency Transconductance Technique for Interface Characterization of Deep Sub-Micron SOI-MOSFETs

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dc.contributor.author Rao, V. Ramgopal
dc.date.accessioned 2023-11-07T09:19:51Z
dc.date.available 2023-11-07T09:19:51Z
dc.date.issued 2001-07
dc.identifier.uri https://www.sciencedirect.com/science/article/abs/pii/S0026271401000671
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12895
dc.description.abstract A multi-frequency transconductance technique for interface characterization of sub-micron SOI–MOSFETs is implemented. This technique is shown to be highly suitable for interface characterization in SOI devices where conventional charge-pumping techniques cannot be applied. Using this multi-frequency technique, sub-micron SOI–MNSFETs with a SiN dielectric deposited by a novel jet-vapor-deposition (JVD) process are characterized. Results are compared with charge pumping results obtained on bulk MNSFETs with identically processed JVD nitrides. en_US
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.subject EEE en_US
dc.subject SOI–MOSFETs en_US
dc.subject Jet-vapor-deposition (JVD) en_US
dc.title Multi-Frequency Transconductance Technique for Interface Characterization of Deep Sub-Micron SOI-MOSFETs en_US
dc.type Article en_US


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