| dc.contributor.author |
Rao, V. Ramgopal |
|
| dc.date.accessioned |
2023-11-07T09:42:56Z |
|
| dc.date.available |
2023-11-07T09:42:56Z |
|
| dc.date.issued |
2000 |
|
| dc.identifier.uri |
http://repository.ias.ac.in/79796/ |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12899 |
|
| dc.description.abstract |
In this work we report results on MNS capacitors with the silicon nitride films fabricated by using a novel Hot-Wire CVD technique. The dependence of deposition parameters on the film properties is looked into. Our electrical characterisation results on MNS capacitors show good oxide breakdown fields, and low leakage. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
The International Society for Optical Engineering |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
HWCVD nitride |
en_US |
| dc.subject |
CMOS technologies |
en_US |
| dc.title |
Low temperature Hot-Wire CVD nitrides for deep sub-micron CMOS technologies |
en_US |
| dc.type |
Article |
en_US |