| dc.contributor.author | Rao, V. Ramgopal | |
| dc.date.accessioned | 2023-11-07T10:50:26Z | |
| dc.date.available | 2023-11-07T10:50:26Z | |
| dc.date.issued | 1998 | |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/725590 | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12904 | |
| dc.description.abstract | The effect of plasma damage on the MOSFET's flicker noise properties is examined in this work. We observe an abnormal noise peak in the 1/f noise spectrum at around 2 kHz which is a characteristic of the plasma damage. The dependence of the noise peak on the plasma induced degradation was studied in virgin n- and p-channel MOSFETs and this peak is shown to correlate well with the amount of damage in the p-MOSFETs. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | EEE | en_US |
| dc.subject | Plasma properties | en_US |
| dc.subject | Voltage | en_US |
| dc.subject | Degradation | en_US |
| dc.subject | Plasma materials processing | en_US |
| dc.subject | Etching | en_US |
| dc.subject | Noise figure | en_US |
| dc.title | Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETs | en_US |
| dc.type | Article | en_US |
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