| dc.contributor.author |
Rao, V. Ramgopal |
|
| dc.date.accessioned |
2023-11-08T05:31:13Z |
|
| dc.date.available |
2023-11-08T05:31:13Z |
|
| dc.date.issued |
1997-12 |
|
| dc.identifier.uri |
https://ieeexplore.ieee.org/document/650505 |
|
| dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12908 |
|
| dc.description.abstract |
In this paper we present experimental and simulation results on planar-doped-barrier MOSFETs (PDBFETs) and show the advantages that arise from the channel delta doping. Early and higher magnitude of velocity overshoot, suppression of avalanche multiplication, reduced hot-carrier problems are some of the advantages offered by PDBFETs over the conventional homogeneously doped MOSFETs in the sub 100 nm regime. Our low-temperature characterizations show clear ballistic transport in the fabricated 85 nm channel MOSFETs. |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.subject |
EEE |
en_US |
| dc.subject |
Fabrication |
en_US |
| dc.subject |
MOSFETs |
en_US |
| dc.subject |
Molecular beam epitaxial growth |
en_US |
| dc.subject |
Doping profiles |
en_US |
| dc.subject |
Hot carriers |
en_US |
| dc.subject |
CMOS technology |
en_US |
| dc.title |
Simulation, fabrication and characterization of high performance planar-doped-barrier sub 100 nm channel MOSFETs |
en_US |
| dc.type |
Article |
en_US |