Development of GaN HEMTs based biosensor

dc.contributor.author	Taliyan, Rajeev
dc.date.accessioned	2023-12-13T11:06:29Z
dc.date.available	2023-12-13T11:06:29Z
dc.date.issued	2019-02
dc.identifier.uri	https://link.springer.com/chapter/10.1007/978-3-319-97604-4_34
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/13410
dc.description.abstract	In this paper, we report on the development of GaN HEMTs for sensing/biosensing applications. Various process steps are optimized at each stages for the development of device. Device shows the 0.5 A/mm drain current, 160 ms/mm transconductance and −4.2 V pinch of voltage for 50 µm Lsd. Devices are packaged for the detection of salt and BPA. Various molar solutions of salt are tested on gateless devices and surprisingly, it is able to detect even the femto molar level of salt. As endocrine disruptors, BPA (Bisphenol A) is tested on gated devices which shows change of about 760 µA in drain current.	en_US
dc.language.iso	en	en_US
dc.publisher	Springer	en_US
dc.subject	Pharmacy	en_US
dc.subject	GaN HEMTs	en_US
dc.subject	Biosensor	en_US
dc.title	Development of GaN HEMTs based biosensor	en_US
dc.type	Article	en_US

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