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Fabrication, Structural, Electrical, and Optical Characterizations of p-Nanoparticle- and n-Nanotube-Based ZnO Homojunction

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dc.contributor.author Manjuladevi, V.
dc.contributor.author Gupta, Raj Kumar
dc.date.accessioned 2024-02-16T09:49:00Z
dc.date.available 2024-02-16T09:49:00Z
dc.date.issued 2020-10
dc.identifier.uri https://ieeexplore.ieee.org/abstract/document/9186309
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14306
dc.description.abstract Fabrication of zinc oxide (ZnO)-based p-n homojunction by depositing undoped p-ZnO nanoparticles (NPs) over electrodeposited n-ZnO hexagonal nanotube (NT) array is reported. Field emission scanning electron microscopy (FESEM) confirmed the formation of homojunction, while X-ray diffraction authenticated the crystallinity of the homojunction and its constituents. The conductivity type of the n- and p-type ZnO was ascertained by the Mott–Schottky plot obtained from electrochemical impedance spectroscopy (EIS) measurements. The fabricated p-n homojunction showed green luminescence emission (not shown in the case of only p- or n-ZnO) in the visible range, which was confirmed by the photoluminescence (PL) study. Au/p-ZnO NPs/n-ZnO NTs/Au offered a cut-in voltage of 0.45–0.33 V and a breakdown voltage of ~−2.68 V in the temperature range of 25–75 °C, as revealed from the I – V and C – V measurements en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.subject Physics en_US
dc.subject Electrical characterizations en_US
dc.subject Zinc oxide (ZnO) en_US
dc.subject Field emission scanning electron microscopy (FESEM) en_US
dc.title Fabrication, Structural, Electrical, and Optical Characterizations of p-Nanoparticle- and n-Nanotube-Based ZnO Homojunction en_US
dc.type Article en_US


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