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The role of the grain boundary on persistent photoconductivity in GaN

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dc.contributor.author Sarkar, Niladri
dc.date.accessioned 2024-02-20T10:13:25Z
dc.date.available 2024-02-20T10:13:25Z
dc.date.issued 2003-10
dc.identifier.uri https://iopscience.iop.org/article/10.1088/0953-8984/15/43/015/meta
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14375
dc.description.abstract We present an experimental investigation on temperature, excitation intensity and spectral dependence of persistent photoconductivity (PPC) in GaN. A grain boundary induced potential barrier is predicted to be responsible for PPC. The non-exponential nature of the PPC decay has been explained by a Gaussian distribution of capture barriers, arising from the trapped charges at the grain boundary interface. The spectral dependence of the PPC suggests the origin of PPC and the yellow luminescence band may arise from the same intrinsic defect. en_US
dc.language.iso en en_US
dc.publisher IOP en_US
dc.subject Physics en_US
dc.subject Photoconductivity en_US
dc.subject Persistent photoconductivity (PPC) en_US
dc.title The role of the grain boundary on persistent photoconductivity in GaN en_US
dc.type Article en_US


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