| dc.contributor.author | Sarkar, Niladri | |
| dc.date.accessioned | 2024-02-20T10:15:28Z | |
| dc.date.available | 2024-02-20T10:15:28Z | |
| dc.date.issued | 2006-01 | |
| dc.identifier.uri | https://iopscience.iop.org/article/10.1088/0953-8984/18/5/021/meta | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14376 | |
| dc.description.abstract | The photoluminescence spectrum of band edge transitions in AlxGa1−xAs is studied as a function of temperature and electron concentration. The parameters that describe the temperature dependence redshift of the band edge transition energy are evaluated using different models. We find that a semi-empirical relation based on a phonon dispersion related spectral function leads to an excellent fit to the experimental data. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IOP | en_US |
| dc.subject | Physics | en_US |
| dc.subject | Electron–phonon | en_US |
| dc.subject | AlxGa1−xAs | en_US |
| dc.subject | Photoluminescence | en_US |
| dc.title | The temperature dependence of the band gap shrinkage due to the electron–phonon interaction in AlxGa1−xAs | en_US |
| dc.type | Article | en_US |
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