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Grain-boundary-controlled current transport in copper phthalocyanine

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dc.contributor.author Sarkar, Niladri
dc.date.accessioned 2024-02-20T10:28:54Z
dc.date.available 2024-02-20T10:28:54Z
dc.date.issued 2006-04
dc.identifier.uri https://pubs.aip.org/aip/apl/article/88/16/162110/152605
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14377
dc.description.abstract Anomalous temperature dependence of resistivity at low temperature is observed in copper-phthallocyanine thin film. A model based on grain-boundary-controlled transport has been developed for the explanation of the observed anomaly. The prediction is based on the assumption that the thin film beyond a certain thickness is mainly polycrystalline, consisting of grains. The transport is expected to be limited by potential barriers at grain boundaries. en_US
dc.language.iso en en_US
dc.publisher AIP en_US
dc.subject Physics en_US
dc.subject Transport properties en_US
dc.subject Electrical properties and parameters en_US
dc.subject Light emitting diodes en_US
dc.subject Crystallographic defects en_US
dc.subject Thin films en_US
dc.subject Potential energy barrier en_US
dc.title Grain-boundary-controlled current transport in copper phthalocyanine en_US
dc.type Article en_US


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