Abstract:
We have shown the influence of the changing channel potential profile from its equilibrium profile on the overall shape of the output characteristics of a Nanowire FET which is operating under ballistic regime. The device has a nano-wire channel with an array of lattice points which is the surrounded by a coaxial metallic gate. There is a dielectric which isolates the channel from the metallic gate. The source and the drain electrodes are maintained at different chemical potentials μ1 and μ2 which gives rise to the channel current in the device. The physics and the modeling of this device have been understood in detail by studying the electrostatics of the channel.