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Photoluminescence spectroscopy of many-body effects in heavily doped AlxGa1−xAs

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dc.contributor.author Sarkar, Niladri
dc.date.accessioned 2024-02-21T03:54:18Z
dc.date.available 2024-02-21T03:54:18Z
dc.date.issued 2005-06
dc.identifier.uri https://journals.aps.org/prb/abstract/10.1103/PhysRevB.71.233204
dc.identifier.uri http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14387
dc.description.abstract We present an experimental investigation of heavy doping-induced many-body effects such as band gap narrowing and Fermi-edge singularity (FES) in AlxGa1−xAs using photoluminescence (PL) spectroscopy. The band-to-band transition energy shifts to lower energies and the FES feature in PL spectra grows with increasing electron concentration. We show that the FES feature is a nonmonotonic function of temperature and excitation intensity. Our data lead us to suggest that a small concentration of nonequilibrated holes is required to enhance the FES feature in the PL spectra. en_US
dc.language.iso en en_US
dc.publisher APS en_US
dc.subject Physics en_US
dc.subject Fermi-edge singularity (FES) en_US
dc.subject Spectroscopy en_US
dc.title Photoluminescence spectroscopy of many-body effects in heavily doped AlxGa1−xAs en_US
dc.type Article en_US


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