Abstract:
This work investigates the effect of defects on the electron density profiles of nanowire FETs with a rectangular cross-section. It also presents a framework for the discretization of the nanowire channels with defects. A self-consistent procedure using Schrodinger-Poisson solver with density matrix formalism calculates the local electron density profiles. The local electron density decreases due to defect-induced scattering potentials. The electron density profiles vary according to the nature of the intrinsic defects. The effect of defect-induced potentials on the output characteristics of the nanowire FET device is studied using the non-equilibrium Green's function (NEGF) methodology. An increase in scattering potential in the nanowire channel causes a considerable decrease in the saturation voltage and current. This results in a faster saturation which changes the overall device performance. Hence, defect-controlled channels can be utilized to fabricate FETs with desired characteristics.