dc.contributor.author |
Sarkar, Niladri |
|
dc.date.accessioned |
2024-02-21T03:56:11Z |
|
dc.date.available |
2024-02-21T03:56:11Z |
|
dc.date.issued |
2021-12 |
|
dc.identifier.uri |
https://iopscience.iop.org/article/10.1088/2631-8695/ac3d13/meta |
|
dc.identifier.uri |
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/14388 |
|
dc.description.abstract |
This work investigates the effect of defects on the electron density profiles of nanowire FETs with a rectangular cross-section. It also presents a framework for the discretization of the nanowire channels with defects. A self-consistent procedure using Schrodinger-Poisson solver with density matrix formalism calculates the local electron density profiles. The local electron density decreases due to defect-induced scattering potentials. The electron density profiles vary according to the nature of the intrinsic defects. The effect of defect-induced potentials on the output characteristics of the nanowire FET device is studied using the non-equilibrium Green's function (NEGF) methodology. An increase in scattering potential in the nanowire channel causes a considerable decrease in the saturation voltage and current. This results in a faster saturation which changes the overall device performance. Hence, defect-controlled channels can be utilized to fabricate FETs with desired characteristics. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
IOP |
en_US |
dc.subject |
Physics |
en_US |
dc.subject |
Nanowire FETs |
en_US |
dc.subject |
Non-equilibrium Green's function (NEGF) |
en_US |
dc.title |
Investigation of the role of defects on channel density profiles and their effect on the output characteristics of a nanowire FET |
en_US |
dc.type |
Article |
en_US |